2SB1396_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1396
Transistors
■ Features
● Low collector to emitter saturation voltage
● Large current capacity
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
-15
-10
-7
-3
-5
1.3
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
VCBO
VCEO
VEBO
ICBO
Ic= -100 uA， IE=0
Ic= -1 mA, RBE=∞
IE= -100 uA， IC=0
VCB= -12V , IE=0
Emitter cut-off current
IEBO VEB= -6V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=-1.5 A, IB=-30 mA
Base - emitter saturation voltage
VBE(sat) IC=-1.5 A, IB=-30 mA
DC current gain
VCE= -2V, IC= -500 mA
hFE
VCE= -2V, IC= -3 A
Collector output capacitance
Cob VCB= -10V, IE= 0,f=1MHz
Transition frequency
fT
VCE= -2V, IC= -300 mA
1.Base
2.Collector
3.Emitter
Unit
V
A
W
℃
Min Typ Max Unit
-15
-10
V
-7
-0.1
uA
-0.1
-0.22 -0.4
V
-0.9 -1.2
140
560
70
26
pF
400
MHz
■ Classification of hfe(1)
Type
2SB1396-S
Range
140-280
Marking
BO S*
2SB1396-T
200-400
BO T*
2SB1396-U
280-560
BO U*
www.kexin.com.cn ¹