2SB1325_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1325
Transistors
■ Features
● Contains diode between collector and emitter.
● Low saturation voltage.
● Large current capacity.
● Complementary to 2SD1999
Collector
1.70 0.1
0.42 0.1
0.46 0.1
Base
RBE
Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-25
VCEO
-20
V
VEBO
-6
IC
-4
A
ICP
-6
PC
1.5
W
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Base-to-Emitter Resistance
Diode Forwad Voltage
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -10 mA， RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -20 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-3 A, IB=-150mA
VBE(sat) IC=-3 A, IB=-150mA
hFE(1) VCE= -2V, IC= -500mA
hFE(2) VCE=- 2V, IC= -3 A
RBE
VF IF=500mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -2V, IC= -500mA
Min Typ Max Unit
-25
-20
V
-6
-1
uA
-0.1
-0.25 -0.5
V
-1.5
70
50
1.5
kΩ
1.5 V
60
pF
300
MHz
■ Marking
Marking
BM
www.kexin.com.cn ¹