2SB1324_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1324
Transistors
■ Features
● Contains diode between collector and emitter.
● Low saturation voltage.
● Large current capacity.
● Complementary to 2SD1998
Base
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Collector
RBE
Emitter
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
1.70 0.1
0.42 0.1
0.46 0.1
Rating
Unit
-40
-30
V
-6
-3
A
-5
1.5
W
150
℃
-55 to 150
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Base-to-Emitter Resistance
Diode Forwad Voltage
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -10 mA， RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -35 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-2 A, IB=-100 mA
VBE(sat) IC=-2 A, IB=-100 mA
hFE(1) VCE= -2V, IC= -500mA
hFE(2) VCE=- 2V, IC= -2 A
RBE
VF IF=500mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -2V, IC= -500mA
Min Typ Max Unit
-40
-30
V
-6
-1
uA
-0.1
-0.25 -0.6
V
-1.5
70
50
0.8
kΩ
1.5 V
55
pF
100
MHz
■ Marking
Marking
BL
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