2SB1323_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1323
Transistors
■ Features
● Contains diode between collector and emitter.
● Low saturation voltage.
● Large current capacity.
● Complementary to 2SD1997
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
-40
-30
-6
-3
-5
1.5
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter on voltage
DC current gain
Base-to-Emitter Resistance
Base Resistance
Diode Forwad Voltage
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -10 mA， RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -35 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-1 A, IB=-50mA
VBE(sat) IC=-1 A, IB=-50mA
VBE(on) VCE= -2V, IC= -1 A
hFE(1) VCE= -2V, IC= -500mA
hFE(2) VCE=- 2V, IC= -2 A
RBE
R1
VF IF=500mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -5V, IC= -500mA
■ Marking
Marking
BK
Unit
V
A
W
℃
Min Typ Max Unit
-40
-30
V
-6
-1
uA
-0.1
-0.18 -0.4
-1.2 V
-1
-5
70
50
0.8
kΩ
120
200 Ω
1.5 V
55
pF
150
MHz
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