2SB1308_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1308
Transistors
■ Features
● Power Transistor
● Excellent DC current Gain
● Low Collector-emitter Saturation Voltage
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
-30
-20
-6
-3
500
250
150
-55 to 150
Unit
V
A
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 uA， IE=0
VCEO Ic= -1 mA, IB=0
VEBO IE= -100 uA， IC=0
ICBO VCB= -25V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-1.5 A, IB=-150 mA
VBE(sat) IC=-1.5 A, IB=-150 mA
hFE VCE= -2V, IC= -500 mA
Cob VCB= -20V, IE= 0,f=1MHz
fT
VCE= -6V, IC= -50 mA,f=30MHz
■ Classification of hfe
Type
Range
Marking
2SB1308-P
82-180
BF P*
2SB1308-Q
120-270
BF Q*
2SB1308-R
180-390
BF R*
Min Typ Max Unit
-30
-20
V
-6
-0.5
uA
-0.5
-0.45
V
-1.2
82
390
60
pF
120
MHz
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