2SB1308 Datasheet, PDF (1/1 Pages) Rohm – Power Transistor (-50V, -3A)

SMD Type
Power Transistor
2SB1308
Features
Low saturation voltage, typically
VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A.
Excellent DC current gain characteristics.
Transistors
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(Pulse)
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse, Pw=10ms
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
Rating
Unit
VCBO
-30
V
VCEO
-20
V
VEBO
-6
V
IC
-3
A
ICP *
-5
A
PC
0.5
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
BVCBO IC=-50ìA
BVCEO IC=-1mA
BVEBO IE=-50ìA
ICBO VCB=-20V
IEBO VEB=-5V
hFE VCE=-2V, IC=-0.5A
VCE(sat) IC=-1.5A,IB=-0.15A
Cob VCE=-6V, IE=50mA, f=100MHz
fT VCB=-20V, IE=0A, f=1MHz
hFE Classification
Marking
Rank
hFE
P
82 180
BF
Q
120 270
R
180 390
Min Typ Max Unit
-30
V
-20
V
-6
V
-0.5 ìA
-0.5 ìA
82
390
-0.45 V
120
MHz
60
pF
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