2SB1302_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1302
Transistors
■ Features
● Low collector-to-emitter saturation voltage.
● Large current capacity.
● Fast switching speed.
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-25
VCEO
-20
V
VEBO
-5
IC
-5
A
ICP
-8
PC
1.3
W
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
Ic= -100 uA， IE=0
Ic= -1 mA, RBE=∞
IE= -100 uA， IC=0
VCB= -20V , IE=0
VEB= -4V , IC=0
IC=-3 A, IB=-60 mA
IC=-6 A, IB=-60 mA
DC current gain
Turn-ON Time
Storage Time
Fall Time
VCE= -2V, IC= -500 mA
hFE
VCE= -2V, IC= -4 A
ton
tstg
See specified Test Circuit.
tf
Collector output capacitance
Cob VCB= -10V, IE= 0,f=1MHz
Transition frequency
fT
VCE= -5V, IC= -200 mA
Min Typ Max Unit
-25
-20
V
-5
-0.5
uA
-0.5
-0.25 -0.5
V
-1 -1.3
100
400
60
40
200
ns
10
60
pF
320
MHz
■ Classification of hfe(1)
Type
2SB1302-R
Range
100-200
Marking
BJ R*
2SB1302-S
140-280
BJ S*
2SB1302-T
200-400
BJ T*
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