2SB1266 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – AF Power Amp Applications

SMD Type
Transistors
AF Power Amplifier Applications
2SB1266
Features
Suitable for sets whose heighit is restricted.
High reliability.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
TC = 25
Jumction temperature
Storage temperature
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VCBO
-60
V
VCEO
-60
V
VEBO
-6
V
IC
-3
A
ICP
-8
A
1.65
W
PC
30
W
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
hFE Classification
Rank
hFE
Q
70 140
R
100 200
Symbol
Testconditons
ICBO VCB = -40V , IE = 0
IEBO VEB = -4V , IC = 0
VCE = -5V , IC = -0.5A
hFE
VCE = -5V , IC = -3A
fT VCE = -5V , IC = -0.5A
Cob VCB = -10V , f = 1MHz
VCE(sat) IC = -2A , IB = -0.2A
VBE ICE = -5V , IC = -0.5A
V(BR)CBO IC = -1mA , IE = 0
V(BR)CEO ^{IC = -5mA , RBE =}
V(BR)EBO ^{IE = -1mA , IC = 0}
S
140 280
Min Typ Max Unit
-100 ìA
-100 ìA
70
280
20
8
MHz
60
pF
-0.4 -1 V
-0.7 -1 V
-60
V
-60
V
-6
V
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