2SB1261-Z_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
■ Features
● High hFE hFE = 100 to 400
● Low VCE(sat) VCE(sat) ≤ 0.3 V
PNP Transistors
2SB1261-Z
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
Transistors
2.30 +0.1
-0.1
0.50 +0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
m ax
2.3
4 .60 ^+0.15
-0.15
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
-60
Collector - Emitter Voltage
VCEO
-60
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Base Current
VEBO
-7
IC
-3
ICP
-5
IB
-0.5
Collector Power Dissipation
Tc = 25°C
PC
Ta = 25°C
Junction Temperature
TJ
Storage Temperature range
Tstg
10
2
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
ICBO
IEBO
Ic= -100 μA， IE=0
Ic= -1 mA, IB=0
IE= -100μA， IC=0
VCB= -60V , IE=0
VEB= -7V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=-1.5 A, IB=-150 mA
Base - emitter saturation voltage
DC current gain
VBE(sat)
hFE
IC=-1.5 A, IB=-150 mA
VCE= -2V, IC= -200 mA
VCE= -2V, IC= -600 mA
VCE= -2V, IC= -2 A
Turn-on time
Storage time
Fall time
Collector output capacitance
Transition frequency
■ Classification of hfe(2)
Type
2SB1261-Z-M
ton
tstg
Ic=-1A,Vcc=-10V,RL=10Ω,
IB1=-IB2=-0.1A
tf
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -5V, IE= 1.5 A
2SB1261-Z-L 2SB1261-Z-K
Range
100-200
160-320
200-400
0.60+ 0.1
- 0.1
Unit
V
A
W
℃
Min
-60
-60
-7
60
100
50
Typ
-0.2
-0.94
0.15
0.5
0.1
40
50
1 Base
2 Collector
3 Emitter
Max Unit
V
-10
uA
-10
-0.3
V
-1.2
400
0.5
2
us
0.5
pF
MHz
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