2SB1260_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1260
Transistors
■ Features
● Hight breakdown voltage and high current.
● Low collector-emitter saturation voltage VCE(sat)
● Good hFE linearty.
● Complementary to 2SD1898
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-80
VCEO
-80
V
VEBO
-5
IC
-1
A
ICP
-2
0.5
PC
W
2
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA, IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -60V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-500 mA, IB=-50mA
VBE(sat) IC=-500 mA, IB=-50mA
hFE VCE= -3V, IC= -100 mA
Cob VCB= -10V, IE= 0,f=1MHz
fT VCE= -10V, IE= 50mA,f=100MHz
Min Typ Max Unit
-80
-80
V
-5
-1
uA
-1
-0.4
V
-1.2
120
390
20
pF
100
MHz
■ Classification of hfe
Type
2SB1260 -Q
Range
120-270
Marking
BE Q*
2SB1260 -R
180-390
BE R*
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