2SB1220_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1220
Transistors
■ Features
● High collector to emitter voltage VCEO.
● Low noise voltage NV.
● Complementary to 2SD1821
1 Base
2 Emitter
3 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-150
VCEO
-150
V
VEBO
-5
IC
-50
mA
ICP
-100
PC
150
mW
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA, IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -100V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-30 mA, IB=-3mA
VBE(sat) IC=-30 mA, IB=-3mA
hFE VCE= -5V, IC= -10 mA
Min Typ Max Unit
-150
-150
V
-5
-0.1
uA
-0.1
-1
V
-1.2
130
450
Noise voltage
NV
VCE = –10V, IC = –1mA, GV= 80dB,
Rg = 100kΩ , Function = FLAT
150
mV
Collector output capacitance
Transition frequency
Cob VCB= -10V, IE= 0,f=1MHz
fT VCE= -10V, IE= 10 mA,f=200MHz
4
pF
200
MHz
■ Classification of hfe
Type
2SB1220-R
Range
130-220
Marking
IR
2SB1220-S
185-330
IS
2SB1220-T
260-450
IT
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