2SB1220 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

SMD Type
Transistors
Silicon PNP Epitaxial Planar Type
2SB1220
Features
High collector-emitter voltage VCEO
Low noise voltage NV
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-150
V
VCEO
-150
V
VEBO
-5
V
ICP
-100
mA
IC
-50
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noixe voltage
Symbol
Testconditons
VCEO IC = -100 ìA, IB = 0
VEBO IE = -10 ìA, IC = 0
ICBO VCB = -100 V, IE = 0
hFE VCE = -5 V, IC = -10 mA
VCE(sat) IC = -30 mA, IB = -3 mA
fT VCB = -10 V, IE = 10 mA, f = 200 MHz
Cob VCB = -10 V, IE = 0, f = 1 MHz
VCE = -10 V, IC = -1 mA, GV = 80 dB,
NV _{Rg = 100KÙ, Function = FLAT}
Min Typ Max Unit
-150
V
-5
V
-1 ìA
130
450
-1
V
200
MHz
4
pF
150
mV
hFE Classification
Marking
Rank
hFE
R
130 220
I
S
185 330
T
260 450
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