2SB1219_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1219
Transistors
■ Features
● Large collector current IC
● Complementary to 2SD1820
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-30
VCEO
-25
V
VEBO
-5
IC
-0.5
A
ICP
-1
PC
150
mW
TJ
150
℃
Tstg
-55 to 150
1 Base
2 Emitter
3 Collector
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
VCBO
VCEO
VEBO
ICBO
Ic= -100 μA， IE=0
Ic= -2 mA, IB=0
IE= -100μA， IC=0
VCB= -20V , IE=0
Emitter cut-off current
IEBO VEB= -4V , IC=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
VCE(sat)
VBE(sat)
hFE
IC=-300 mA, IB=-30mA
IC=-300 mA, IB=-30mA
VCE= -10V, IC= -150 mA
VCE= -10V, IC= -500 mA
Collector output capacitance
Cob VCB= -10V, IE= 0,f=1MHz
Transition frequency
fT
VCE= -10V, IC= -50 mA,f=200MHz
■ Classification of hfe(1)
Type
2SB1219-Q
Range
85-170
Marking
CQ
2SB1219-R
120-240
CR
2SB1219-S
170-340
CS
2SB1219
85-340
C
Min Typ Max Unit
-30
-25
V
-5
-0.1
uA
-0.1
-0.35 -0.6
V
-1.1 -1.5
85
340
40
6 15 pF
200
MHz
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