2SB1218A_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1218A
Transistors
■ Features
● High DC Current Gain
● Complementary to 2SD1819A
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
TJ
Tstg
Rating
-45
-45
-7
-100
150
833
150
-55 to 150
Unit
V
mA
mW
℃/W
℃
1 Base
2 Emitter
3 Collector
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= -100 μA， IE=0
Collector- emitter breakdown voltage
VCEO Ic= -2 mA, IB=0
Emitter - base breakdown voltage
VEBO IE= -100μA， IC=0
Collector-base cut-off current
ICBO VCB= -40V , IE=0
Collector-emitter cut-off current
ICEO VCE= -20V , IB=0
Emitter cut-off current
IEBO VEB= -5V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=-100 mA, IB=-10mA
Base - emitter saturation voltage
VBE(sat) IC=-100 mA, IB=-10mA
DC current gain
hFE VCE= -10V, IC= -2 mA
Collector output capacitance
Cob VCB= -10V, IE= 0,f=1MHz
Transition frequency
fT
VCE= -10V, IE= 1 mA,f=200MHz
■ Classification of hfe
Type
2SB1218A-Q
Range
160-260
Marking
BQ
2SB1218A-R
210-340
BR
2SB1218A-S
290-460
BS
Min Typ Max Unit
-45
-45
V
-7
-0.1
-10 uA
-0.1
-0.5
V
-1.2
160
460
2.7
pF
80
MHz
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