2SB1218 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon PNP Epitaxial Planar Type

SMD Type
TransistIoCrs
Silicon PNP Epitaxial Planar Type
2SB1218
Features
High forward current transfer ratio hFE.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-45
V
VCEO
-45
V
VEBO
-7
V
ICP
-200
A
IC
-100
A
PC
150
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Collector-emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
VCBO IC = -10 ìA, IE = 0
VCEO IC = -2 mA, IB = 0
VEBO IE = -10 ìA, IC = 0
ICBO VCB = -20 V, IE = 0
ICEO VCE = -10 V, IB = 0
hFE VCE = -10 V, IC = -2 mA
VCE(sat) IC = -100 mA, IB = -10 mA
fT VCB = -10 V, IE = 1 mA, f = 200 MHz
Cob VCB = -10 V, IE = 0, f = 1 MHz
Min Typ Max Unit
-45
V
-45
V
-7
V
-0.1 ìA
-100 ìA
160
460
-0.3 -0.5 V
80
MHz
2.7
pF
hFE Classification
Marking
Rank
hFE
BQ
Q
160 260
BR
R
210 340
BS
S
290 460
B
No-rank
160 460
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