2SB1216_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
2SB1216
■ Features
●Low collector-to-emitter saturation voltage.
● High current and high fT
● Fast switching time.
● Complementary to 2SD1816
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Tc = 25℃
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
Rating
Unit
-120
-100
V
-6
-4
A
-8
20
W
1
150
℃
-55 to 150
1 Base
2 Collector
3 Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= -100 μA， IE=0
Collector- emitter breakdown voltage
VCEO Ic= -1 mA, RBE=∞
Emitter - base breakdown voltage
VEBO IE= -100μA， IC=0
Collector-base cut-off current
ICBO VCB= -100V , IE=0
Emitter cut-off current
IEBO VEB= -5V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=-2 A, IB=-200mA
Base - emitter saturation voltage
VBE(sat) IC=-2 A, IB=-200mA
DC current gain
VCE= -5V, IC= -500 mA
hFE
VCE= -5V, IC= -3 A
Turn-ON Time
ton
Storage Time
tstg
See specified Test Circuit
Fall Time
tf
Collector output capacitance
Cob VCB= -10V, IE= 0,f=1MHz
Transition frequency
fT
VCE= -10V, IC= -500 mA
Min Typ Max Unit
-120
-100
V
-6
-1
uA
-1
-0.2 -0.4
V
-0.9 -1.2
70
400
40
100
800
ns
50
65
pF
130
MHz
■ Classification of hfe(1)
Type
Range
2SB1216-Q 2SB1216-R 2SB1216-S 2SB1216-T
70-140
100-200
140-280
200-400
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