2SB1215_15 Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
2SB1215
■ Features
●Low collector-to-emitter saturation voltage.
● High current and high fT
● Fast switching time.
● Complementary to 2SD1815
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Tc = 25℃
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
Rating
Unit
-120
-100
V
-6
-3
A
-6
20
W
1
150
℃
-55 to 150
1 Base
2 Collector
3 Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-ON Time
Storage Time
Fall Time
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA, RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -100V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-1.5 A, IB=-150mA
VBE(sat) IC=-1.5 A, IB=-150mA
VCE= -5V, IC= -500 mA
hFE
VCE= -5V, IC= -2 A
ton
tstg
See specified Test Circuit
tf
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -10V, IC= -500 mA
■ Classification of hfe(1)
Type
Range
2SB1215-Q 2SB1215-R 2SB1215-S 2SB1215-T
70-140
100-200
140-280
200-400
Min Typ Max Unit
-120
-100
V
-6
-1
uA
-1
-0.2 -0.5
V
-0.9 -1.2
70
400
40
100
800
ns
50
40
pF
130
MHz
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