2SB1205_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
2SB1205
■ Features
●Low collector-to-emitter saturation voltage.
● High current and high fT
● Fast switching time.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Base Current
Collector Power Dissipation
Tc = 25℃
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
Tstg
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
Rating
Unit
-25
-20
V
-5
-5
-8
A
-0.5
10
W
1
150
℃
-55 to 150
1 Base
2 Collector
3 Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= -100 μA， IE=0
Collector- emitter breakdown voltage
VCEO Ic= -1 mA, RBE=∞
Emitter - base breakdown voltage
VEBO IE= -100μA， IC=0
Collector-base cut-off current
ICBO VCB= -20V , IE=0
Emitter cut-off current
IEBO VEB= -4V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=-3 A, IB=-60mA
Base - emitter saturation voltage
VBE(sat) IC=-3 A, IB=-60mA
DC current gain
VCE= -2V, IC= -500 mA
hFE
VCE= -2V, IC= -4 A
Turn-ON Time
ton
Storage Time
tstg
See specified Test Circuit
Fall Time
tf
Collector output capacitance
Cob VCB= -10V, IE= 0,f=1MHz
Transition frequency
fT
VCE= -5V, IC= -200 mA
Min Typ Max Unit
-25
-20
V
-5
-0.5
uA
-0.5
-0.25 -0.5
V
-1 -1.3
100
400
60
40
200
ns
10
60
pF
320
MHz
■ Classification of hfe(1)
Type
2SB1205-R
Range
100-200
2SB1205-S
140-280
2SB1205-T
200-400
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