2SB1203_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
2SB1203
■ Features
●Low collector-to-emitter saturation voltage.
● High current and high fT
● Fast switching speed
● Complementary to 2SD1803
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Base
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Symbol
Rating
Unit
VCBO
-60
VCEO
-50
V
Emitter - Base Voltage
VEBO
-6
Collector Current - Continuous
Collector Current - Pulse
IC
-5
A
ICP
-8
Collector Power Dissipation
Tc = 25℃
20
PC
W
1
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-ON Time
Storage Time
Fall Time
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA, RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -50V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-3 A, IB=-150mA
VBE(sat) IC=-3 A, IB=-150mA
VCE= -2V, IC= -500 mA
hFE
VCE= -2V, IC= -4 A
ton
tstg
See specified Test Circuit
tf
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -10V, IC= -1 A
Min Typ Max Unit
-60
-50
V
-6
-1
uA
-1
-0.28 -0.55
V
-0.95 -1.3
70
400
35
50
450
ns
20
60
pF
130
MHz
■ Classification of hfe(1)
Type
2SB1203-Q
Range
70-140
2SB1203-R
100-200
2SB1203-S
140-280
2SB1203-T
200-400
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