2SB1201_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
2SB1201
■ Features
●Low collector-to-emitter saturation voltage.
● Fast switching speed.
● Large current capacity and wide ASO.
● Complementary to 2SD1801
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Base
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Tc = 25℃
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-60
VCEO
-50
V
VEBO
-6
IC
-2
A
ICP
-4
15
PC
W
0.8
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= -100 μA， IE=0
Collector- emitter breakdown voltage
VCEO Ic= -1 mA, RBE=∞
Emitter - base breakdown voltage
VEBO IE= -100μA， IC=0
Collector-base cut-off current
ICBO VCB= -50V , IE=0
Emitter cut-off current
IEBO VEB= -5V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=-1 A, IB=-50mA
Base - emitter saturation voltage
VBE(sat) IC=-1 A, IB=-50mA
DC current gain
VCE= -2V, IC= -100 mA
hFE
VCE= -2V, IC= -1.5 A
Turn-ON Time
ton
Storage Time
tstg
See specified Test Circuit
Fall Time
tf
Collector output capacitance
Cob VCB= -10V, IE= 0,f=1MHz
Transition frequency
fT
VCE= -10V, IC= -50mA
■ Classification of hfe(1)
Type
2SB1201-R 2SB1201-S 2SB1201-T 2SB1201-U
Range
100-200
140-280
200-400
280-560
Min Typ Max Unit
-60
-50
V
-6
-0.1
uA
-0.1
-0.3 -0.7
V
-0.9 -1.2
100
560
40
60
450
ns
30
22
pF
150
MHz
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