2SB1197_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

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PNP Transistors
2SB1197 (2SB1197K)
Transistors
Features
Low VCE(sat).VCE(sat) -0.5V IC / IB= -0.5A / -50mA .
IC = -0.8A.
PNP silicon transistor
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base Voltage
Collector-emitter Voltage
Emitter-base Voltage
Collector current
Collector power dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-40
V
VCEO
-32
V
VEBO
-5
V
IC
-0.8
A
PC
0.2
W
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltag
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-Emitter Saturation Voltage
DC current transfer ratio
Output Capacitance
Transition frequency
Symbol
Test Conditions
VCBO IC = -50 A
V CEO IC = -1mA
VEBO IE = -50 A
ICBO VCB = -20V
IEBO VEB = -4V
VCE(sat) IC = -0.5A , IB = -50mA
hFE VCE = -3V , IC = -100mA
Cob VCB = -10V , IE = 0A , f = 1MHz
f T VCE = -5V , IE = 50mA , f = 100MHz
hFE Classification
Type
Range
Marking
2SB1197/K-Q
120-270
AHQ
2SB1197/K-Q
180-390
AHR
Min Typ Max Unit
-40
V
-32
V
-5
V
-0.5
A
-0.5
A
-0.5 V
120
390
12 30 pF
200
MHz
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