2SB1189_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1189
Transistors
■ Features
● High breakdown voltage, BVCEO=-80V,
and High Current, IC=-0.7A
● Complementary to 2SD1767
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-80
VCEO
-80
V
VEBO
-5
IC
-0.7
A
0.5
PC
W
2
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -2 mA, IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -60V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-500 mA, IB=-50mA
VBE(sat) IC=-500 mA, IB=-50mA
hFE VCE= -3V, IC= -100 mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -5V, IE = 50mA,f=100MHz
■ Classification of hfe
Type
Range
Marking
2SB1189-Q
120-270
BD Q*
2SB1189-R
180-390
BD R*
Min Typ Max Unit
-80
-80
V
-5
-0.5
uA
-0.5
-0.2 -0.4
V
-1.2
120
390
14 20 pF
100
MHz
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