2SB1188 Datasheet, PDF (1/1 Pages) Rohm – Medium power Transistor(-32V, -2A)

SMD Type
Medium Power Transistor
2SB1188
Transistors
Features
Low VCE(sat).
VCE(sat) = -0.5V (Typ.)
(IC/IB = -2A / -0.2A)
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base Voltage
Collector-emitter Voltage
Emitter-base Voltage
Collector current
Collector power dissipation
Jumction temperature
Storage temperature
* PW=100ms
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltae
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-Emitter Saturation Voltage
DC current transfer ratio
Transition frequency
Output Capacitance
Symbol
Rating
Unit
VCBO
-40
V
VCEO
-32
V
VEBO
-5
V
IC
-2
A
ICP *
-3
A
PC
0.5
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
BVCBO IC = -50 A
BVCEO IC = -1mA
BVEBO IE = -50 A
ICBO VCB = -20V
IEBO VEB = -4V
VCE(sat) IC = -2A , IB = -0.2A
hFE VCE = -3V , IC = -0.5A
fT VCE = -5V , IE = 0.5A , f = 30MHz
Cob VCB = -10V , IE = 0, f = 1MHz
hFE Classification
Marking
Rank
hFE
P
82 180
BC
Q
120 270
R
180 390
Min Typ Max Unit
-40
V
-32
V
-5
V
-1 ìA
-1 ìA
-0.5 -0.8 V
82
390
100
MHz
50
pF
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