2SB1184_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1184
Transistors
■ Features
● Low VCE(sat).VCE(sat) = -0.5V
● Complementary to 2SD1760
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Tc=25°C
Ta = 25℃
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
Rating
Unit
-60
-50
V
-5
-3
A
15
W
1
150
℃
-55 to 150
1 Base
2 Collector
3 Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= -100 μA， IE=0
Collector- emitter breakdown voltage
VCEO Ic= -1 mA, IB=0
Emitter - base breakdown voltage
VEBO IE= -100μA， IC=0
Collector-base cut-off current
ICBO VCB= -50V , IE=0
Emitter cut-off current
IEBO VEB= -4V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=-2 A, IB=-200mA
Base - emitter saturation voltage
VBE(sat) IC=-2 A, IB=-200mA
DC current gain
hFE VCE= -3V, IC= -500 mA
Collector output capacitance
Cob VCB= -10V, IE= 0,f=1MHz
Transition frequency
fT
VCE= -5V, IE= 500mA,f= 30 MHz
Min Typ Max Unit
-60
-50
V
-5
-1
uA
-1
-1
V
-1.2
120
390
50
pF
70
MHz
■ Classification of hfe
Type
Range
2SB1184-Q
120-270
2SB1184-R
180-390
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