2SB1181 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Power Transistor

SMD Type
Power Transistor
2SB1181
Transistors
Features
Hight breakdown voltage and high current.
Low VCE(sat).
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current pulse
Collector power dissipation
Collector power dissipation (Tc=25 )
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-80
V
VCEO
-80
V
VEBO
-5
V
IC
-1
A
ICP
-2
A
PC
1
W
PC
10
W
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
Testconditons
BVCBO IC=-50ìA
BVCEO IC=-1mA
BVEBO IE=-50ìA
ICBO VCB=-60V
IEBO VEB=-4V
VCE(sat) IC= -500mA, IB= -50mA
hFE VCE= -3V, IC= -0.1A
fT VCE= -10V, IE=50mA, f=100MHz
Cob VCB= -10V,IE=0A,f=1MHz
Min Typ Max Unit
-80
V
-80
V
-5
V
-1 ìA
-1 ìA
-0.4 V
82
390
100
MHz
25
pF
hFE Classification
Rank
hFE
P
82 180
Q
120 270
R
180 390
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