2SB1176_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1176
Transistors
■ Features
● Satisfactory linearity of forward current transfer ratio hFE
● Low collector-emitter saturation voltage VCE(sat)
● Large collector current IC
● Complementary to 2SD1746
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Base
2 Collector
3 Emitter
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-130
Collector - Emitter Voltage
VCEO
-80
V
Emitter - Base Voltage
VEBO
-7
Collector Current - Continuous
Collector current -Pulse
IC
-5
A
ICP
-10
Collector Power Dissipation
15
PC
W
Ta = 25℃
1.3
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-ON Time
Storage Time
Fall Time
Transition frequency
Symbol
Test Conditions
Min
VCBO Ic= -100 μA， IE=0
-130
VCEO Ic= -10 mA, IB=0
-80
VEBO IE= -100μA， IC=0
-7
ICBO VCB= -100V , IE=0
IEBO VEB= -6V , IC=0
VCE(sat) IC=-4 A, IB=-200mA
VBE(sat) IC=-4 A, IB=-200mA
VCE= -2V, IC= -100 mA
45
hFE
VCE= -2V, IC= -2 A
90
ton
tstg
IC = −2A, IB1 = −200 mA, IB2 = 200 mA
VCC = −50 V
tf
fT
VCE= -10V, IC= -500mA,f=10MHz
Typ
0.13
0.5
0.13
30
Max
-10
-50
-0.5
-1.5
260
Unit
V
uA
V
us
MHz
■ Classification of hfe(2)
Type
Range
2SB1176-Q
90-180
2SB1176-P
130-260
www.kexin.com.cn ¹