2SB1175_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1175
Transistors
■ Features
● Satisfactory linearity of forward current transfer ratio hFE
● Low collector-emitter saturation voltage VCE(sat)
● Large collector current IC
● Complementary to 2SD1745
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
Collector Power Dissipation
Ta = 25℃
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
Rating
Unit
-130
-80
V
-7
-4
A
-8
15
W
1.3
150
℃
-55 to 150
1 Base
2 Collector
3 Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector- base breakdown voltage
VCBO Ic= -100 μA， IE=0
-130
Collector- emitter breakdown voltage
VCEO Ic= -10 mA, IB=0
-80
V
Emitter - base breakdown voltage
VEBO IE= -100μA， IC=0
-7
Collector-base cut-off current
Emitter cut-off current
ICBO
IEBO
VCB= -100V , IE=0
VEB= -6V , IC=0
-10
uA
-50
Collector-emitter saturation voltage
Base - emitter saturation voltage
VCE(sat) IC=-3 A, IB=-150mA
VBE(sat) IC=-3 A, IB=-150mA
-0.5
V
-1.5
DC current gain
VCE= -2V, IC= -100 mA
hFE
VCE= -2V, IC= -1 A
45
90
260
Turn-ON Time
Storage Time
Fall Time
ton
0.15
tstg
IC = −1A, IB1 = −100 mA, IB2 = 100 mA
VCC = −50 V
0.8
us
tf
0.15
Transition frequency
fT
VCE= -10V, IC= -500mA,f=10MHz
30
MHz
■ Classification of hfe(2)
Type
Range
2SB1175-Q
90-180
2SB1175-P
130-260
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