2SB1175 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

SMD Type
Transistors
Silicon PNP Epitaxial Planar Type
2SB1175
Features
Low collector-emitter saturation voltage VCE(sat).
Satisfactory linearity of forward current transfer ratio hFE.
Large collector current IC.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VCBO
-130
V
VCEO
-80
V
VEBO
-7
V
IC
-4
A
ICP
-8
A
PC
1.3
W
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Collector-emitter cutoff curent
Emitter-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE Classification
Rank
hFE
Q
90 180
P
130 260
Symbol
Testconditons
Min Typ Max Unit
VCEO IC = -10 mA, IB = 0
-80
V
ICEO VCE = -100 V,IB = 0
-10 ìA
IEBO VEB = -5 V, IC = 0
-50 ìA
VCE = -2 V, IC = -1 A
hFE
VCE = -2 V, IC = -0.1 A
90
260
V
45
VCE(sat) IC = -3 A, IB = -0.15 A
-0.5 V
VBE(sat) IC = -3 A, IB = -0.15 A
-1.5 V
fT VCE = -10 V, IC = -0.5 A , f = 10 MHz
30
MHz
ton
0.15
ìs
IC = -1 A,IB1 = -0.1 A,IB2 = 0.1 A, VCC =
tstg _{-50 V}
0.8
ìs
tf
0.15
ìs
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