2SB1174 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – For voltage switching

SMD Type
Transistors
Silicon PNP Epitaxial Planar Type
2SB1174
Features
Low collector-emitter saturation voltage VCE(sat).
Satisfactory linearity of forward current transfer ratio hFE.
Large collector current IC.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VCBO
-130
V
VCEO
-80
V
VEBO
-7
V
IC
-3
A
ICP
-6
A
PC
1.3
W
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Collector-emitter cutoff curent
Emitter-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
Testconditons
VCEO IC = -10 mA, IB = 0
ICEO VCE = -100 V,IB = 0
IEBO VEB = -5 V, IC = 0
VCE = -2 V, IC = -0.5 A
hFE
VCE = -2 V, IC = -0.1 A
VCE(sat) IC = -2 A, IB = -0.1 A
VBE(sat) IC = -2 A, IB = -0.1 A
fT VCE = -10 V, IC = -0.5 A , f = 10 MHz
ton
IC = -0.5 A,IB1 = -50 mA,IB2 = 50 mA,
tstg _{VCC = -50 V}
tf
Min Typ Max Unit
-80
V
-10 ìA
-50 ìA
90
260
45
-0.5 V
-1.5 V
30
MHz
0.3
ìs
1.1
ìs
0.3
ìs
hFE Classification
Rank
hFE
Q
90 180
P
130 260
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