2SB1172_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
2SB1172
■ Features
● High forward current transfer ratio hFE which
has satisfactory linearity
● Low collector-emitter saturation voltage VCE(sat)
● Complementary to 2SD1742
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-60
Collector - Emitter Voltage
VCEO
-60
V
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
Collector current -Pulse
IC
-3
A
ICP
-5
Collector Power Dissipation
15
PC
W
Ta = 25℃
1.3
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Collector- base breakdown voltage
VCBO Ic= -100 μA， IE=0
-60
Collector- emitter breakdown voltage
VCEO Ic= -30 mA, IB=0
-60
Emitter - base breakdown voltage
VEBO IE= -100μA， IC=0
-5
Collector-base cut-off current
ICBO VCB= -60V , IE=0
Collector-emitter cut-off current
ICES VCE = −60 V, IB = 0
Collector-emitter cut-off current
ICEO VCE = −30 V, IB = 0
Emitter cut-off current
IEBO VEB= -5V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=-3 A, IB=-375mA
Base - emitter saturation voltage
VBE(sat) IC=-3 A, IB=-375mA
Base - emitter voltage
VBE VCE= -4V, IC= -3 A
DC current gain
VCE= -4V, IC= -1 A
70
hFE
VCE= -4V, IC= -3 A
10
Turn-ON Time
Storage Time
Fall Time
ton
tstg
IC = −1 A, IB1 = −100 mA, IB2 = 100
mA VCC = −50 V
tf
Transition frequency
fT
VCE= -10V, IC= -500mA,f=10MHz
■ Classification of hfe(1)
Type
2SB1172-Q
2SB1172-P
Range
70-150
120-250
1 Base
2 Collector
3 Emitter
Typ Max Unit
V
-0.1 mA
-200
uA
-300
-0.1 mA
-1.2
-1.5 V
-1.8
250
0.5
1.2
us
0.3
30
MHz
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