2SB1169_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
2SB1169
■ Features
● High forward current transfer ratio hFE which
has satisfactory linearity
● Low collector-emitter saturation voltage VCE(sat)
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Ta = 25℃
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
Rating
Unit
-60
-60
V
-5
-1
A
-2
15
W
1.3
150
℃
-55 to 150
1 Base
2 Collector
3 Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Collector-emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Turn-ON Time
Storage Time
Fall Time
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -30 mA, IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -60V , IE=0
ICES VCE = −60 V, IB = 0
ICEO VCE = −30 V, IB = 0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-1 A, IB=-125mA
VBE(sat) IC=-1 A, IB=-125mA
VBE VCE= -4V, IC= -1 A
VCE= -4V, IC= -200 mA
hFE
VCE= -4V, IC= -1 A
ton
tstg
IC = −1 A, IB1 = −50 mA, IB2 = 50 mA
VCC = −50 V
tf
fT VCE= -10V, IC= -500mA,f=10MHz
■ Classification of hfe(1)
Type
2SB1169-R
2SB1169-Q
2SB1169-P 2SB1169-O
Range
40-90
70-150
120-250
200-450
Min Typ Max Unit
-60
-60
V
-5
-0.1 mA
-200
uA
-300
-0.1 mA
-1
-1.2 V
-1.3
40
450
15
0.5
1.2
us
0.3
40
MHz
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