2SB1132_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1132
Transistors
Features
Low VCE(sat)
Compliments to 2SD1664
1.70 0.1
0.42 0.1
0.46 0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-32
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
(DC)
-1
A
IC
Single pulse, PW=100ms
-2
A
Collector Power Dissipation
PC *
0.5
W
Jumction temperature
Tj
150
Storage temperature Range
Tstg
-55 to +150
* When mounted on a 40x40x0.7mm ceramic board.
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -50μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -50μA， IC=0
ICBO VCB= -20 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-500 mA, IB=-50mA
hFE VCE= -3V, IC= -0.1A
Cob VCB= -10V, IE= 0mA,f=1MHz
fT
VCE= -5V, IE= 50mA,f=30MHz
1.Base
2.Collector
3.Emitter
Min Typ Max Unit
-40
-32
V
-5
-0.5
uA
-0.5
-0.2 -0.5 V
82
390
20 30 pF
150
MHz
hFE Classification
Type
Range
Marking
2SB1132-P
82-180
BAP*
2SB1132-Q
120-270
BAQ*
2SB1132-R
180-390
BAR*
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