2SB1124_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1124
Transistors
■ Features
● Low collector-to-emitter saturation voltage.
● Large current capacity and wide ASO.
● Fast switching speed.
● Complementary to 2SD1624
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
Collector - Emitter Voltage
VCBO
-60
VCEO
-50
V
Emitter - Base Voltage
VEBO
-6
Collector Current - Continuous
Collector current -Pulse
IC
-3
A
ICP
-6
Collector Power Dissipation
0.5
PC
W
(Note.1)
1.5
Junction Temperature
TJ
Storage Temperature range
Tstg
Note.1: Mounted on ceramic board (250mm² ×0.8mm)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
150
-55 to 150
Test Conditions
℃
Min Typ Max Unit
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
ICBO
IEBO
Ic= -100 μA， IE=0
Ic= -1 mA， RBE=∞
IE= -100μA， IC=0
VCB= -50V , IE=0
VEB= -5V , IC=0
-60
-50
V
-6
-1
uA
-1
Collector-emitter saturation voltage
Base - emitter saturation voltage
VCE(sat) IC=-2 A, IB=-100mA
VBE(sat) IC=-2 A, IB=-100mA
-0.35 -0.7
V
-0.94 -1.2
DC current gain
VCE= -2V, IC= -100 mA
hFE
VCE= -2V, IC= -3 A
100
560
35
Turn-ON Time
Storage Time
ton
tstg
See specified Test Circuit.
70
450
ns
Fall Time
tf
35
Collector output capacitance
Cob VCB = –10V, IE = 0, f = 1MHz
39
pF
Transition frequency
fT
VCE= -10V, IC= -50mA
150
MHz
■ Classification of hfe(1)
Type
2SB1124-R
2SB1124-S
2SB1124-T 2SB1124-U
Range
100-200
140-280
200-400
280-560
Marking
BG R*
BG S*
BG T*
BG U*
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