2SB1123_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1123
Transistors
■ Features
● Low collector-to-emitter saturation voltage.
● Large current capacity and wide ASO.
● Fast switching speed.
● Complementary to 2SD1623
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
Collector - Emitter Voltage
VCBO
-60
VCEO
-50
V
Emitter - Base Voltage
VEBO
-6
Collector Current - Continuous
Collector current -Pulse
IC
-2
A
ICP
-4
Collector Power Dissipation
0.5
PC
W
(Note.1)
1.3
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
Note.1: Mounted on ceramic board (250mm ² ×0.8mm)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Collector- base breakdown voltage
VCBO Ic= -100 μA， IE=0
-60
Collector- emitter breakdown voltage
VCEO Ic= -1 mA， RBE=∞
-50
Emitter - base breakdown voltage
VEBO IE= -100μA， IC=0
-6
Collector-base cut-off current
ICBO VCB= -50V , IE=0
Emitter cut-off current
IEBO VEB= -5V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=-1 A, IB=-50mA
Base - emitter saturation voltage
VBE(sat) IC=-1 A, IB=-50mA
DC current gain
VCE= -2V, IC= -100 mA
100
hFE
VCE= -2V, IC= -1.5 A
40
Turn-ON Time
Storage Time
ton
tstg
See specified Test Circuit.
Fall Time
tf
Collector output capacitance
Cob VCB = –10V, IE = 0, f = 1MHz
Transition frequency
fT
VCE= -10V, IC= -50mA
■ Classification of hfe(1)
Type
2SB1123-R
2SB1123-S
2SB1123-T 2SB1123-U
Range
100-200
140-280
200-400
280-560
Marking
BF R*
BF S*
BF T*
BF U*
1.Base
2.Collector
3.Emitter
Typ Max Unit
V
-0.1
uA
-0.1
-0.3 -0.7
V
-0.9 -1.2
560
60
450
ns
30
22
pF
150
MHz
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