2SB1122_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
IC
PNP Transistors
2SB1122
■ Features
● Very small size making it easy to provide high
highdensity, small-sized hybrid IC’s.
● Complementary to 2SD1622
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-60
Collector - Emitter Voltage
VCEO
-50
V
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
Collector current -Pulse
IC
-1
A
ICP
-2
Collector Power Dissipation
0.5
PC
W
(Note.1)
1.3
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= -100 μA， IE=0
Collector- emitter breakdown voltage
VCEO Ic= -1 mA， RBE=∞
Emitter - base breakdown voltage
VEBO IE= -100μA， IC=0
Collector-base cut-off current
ICBO VCB= -50V , IE=0
Emitter cut-off current
IEBO VEB= -4V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=-500 mA, IB=-50mA
Base - emitter saturation voltage
VBE(sat) IC=-500 mA, IB=-50mA
DC current gain
VCE= -2V, IC= -100 mA
hFE
VCE= -2V, IC= -1 A
Turn-ON Time
ton
Storage Time
tstg
See specified Test Circuit.
Fall Time
tf
Collector output capacitance
Cob VCB = –10V, IE = 0, f = 1MHz
Transition frequency
fT
VCE= -10V, IC= -50mA
■ Classification of hfe(1)
Type
2SB1122-R
2SB1122-S
2SB1122-T 2SB1122-U
Range
100-200
140-280
200-400
280-560
Marking
BE R*
BE S*
BE T*
BE U*
Min Typ Max Unit
-60
-50
V
-5
-0.1
uA
-0.1
-0.18 -0.5
V
-0.9 -1.2
100
560
30
40
300
ns
30
12
pF
150
MHz
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