2SB1122 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – Low-Frequency Power Amp Applications

SMD Type
Transistors
PNP Epitaxial Planar Silicon Transistors
2SB1122
Features
Adoption of FBET process..
Very small size making it easy to provide highdensity
hybrid IC’s.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-60
V
VCEO
-50
V
VEBO
-5
V
IC
-1
A
ICP
-2
A
PC
500
mW
Tj
150
Tstg
-55 to +150
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