2SB1121_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1121
Transistors
■ Features
● Low collector-to-emitter saturation voltage.
● Large current capacity and wide ASO.
● Fast switching speed.
● Complementary to 2SD1621
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
-30
-25
-6
-2
-5
500
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-on time
Storage time
Turn -off time
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -20 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-1.5A, IB=-75mA
VBE(sat) IC=-1.5A, IB=-75mA
hFE(1) VCE= -2V, IC= -100mA
hFE(2) VCE=- 2V, IC= -1.5A
ton
tstg See specified Test Circuit.
toff
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -10V, IC= -50mA
■ Classification of hfe(1)
Type
2SB1121-R
Range
100-200
Marking
BDR
2SB1121-S
140-280
BDS
2SB1121-T
200-400
BDT
2SB1121-U
280-560
BDU
Unit
V
A
mW
℃
1.Base
2.Collector
3.Emitter
Min Typ Max Unit
-30
-25
V
-6
-0.1
uA
-0.1
-0.35 -0.6
V
-0.85 -1.2
100
560
65
60
350
ns
25
32
pF
150
MHz
www.kexin.com.cn ¹