2SB1121 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-Current Driver Applications

SMD Type
Transistors
PNP Epitaxial Planar Silicon Transistors
2SB1121
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity and wide ASO.
Fast switching speed.
Very small size making it easy to provide highdensity,
small-sized hybrid IC’s.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-30
V
VCEO
-25
V
VEBO
-6
V
IC
-2
A
ICP
-5
A
PC
500
mW
Tj
150
Tstg
-55 to +150
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