2SB1118_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1118
Transistors
■ Features
● Low collector-to-emitter saturation voltage.
● Very small size making it easy to provide high
highdensity, small-sized hybrid IC’s.
● Complementary to 2SD1618
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
Collector - Emitter Voltage
VCBO
-20
VCEO
-15
V
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
VEBO
-5
IC
-0.7
A
ICP
-1.5
Collector Power Dissipation
0.5
PC
W
(Note.1)
1.3
Junction Temperature
Storage Temperature range
TJ
150
℃
Tstg
-55 to 150
Note.1: Mounted on ceramic board (250mm² ×0.8mm)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
ICBO
IEBO
Ic= -100 μA， IE=0
Ic= -1 mA， RBE=∞
IE= -100μA， IC=0
VCB= -15V , IE=0
VEB= -4V , IC=0
-20
-15
V
-5
-0.1
uA
-0.1
Collector-emitter saturation voltage
IC=-5 mA, IB=-0.5mA
VCE(sat)
IC=-100 mA, IB=-10mA
-15 -35
mV
-60 -120
Base - emitter saturation voltage
DC current gain
VBE(sat)
hFE
IC=-100 mA, IB=-10mA
VCE= -2V, IC= -50 mA
VCE= -2V, IC= -500 mA
-0.8 -1.2 V
140
560
60
Collector output capacitance
Cob VCB = –10V, IE = 0, f = 1MHz
13
pF
Transition frequency
■ Classification of hfe(1)
fT
VCE= -10V, IC= -50mA
250
MHz
Type
2SB1118-S
2SB1118-T
2SB1118-U
Range
140-280
200-400
280-560
Marking
BA S*
BA T*
BA U*
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