2SB1115A_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1115A
Transistors
■ Features
● Low VCE(sat) VCE(sat)=-0.2V at 1A
● Complementary to 2SD1615A
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse (Note.1)
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-80
VCEO
-60
V
VEBO
-6
IC
-1
A
ICP
-2
PC
2
W
TJ
150
℃
Tstg
-55 to 150
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50℅
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage (Note.1)
Base - emitter saturation voltage (Note.1)
Base - emitter voltage (Note.1)
DC current gain (Note.1)
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -80V , IE=0
IEBO VEB= -6V , IC=0
VCE(sat) IC=-1 A, IB=-50mA
VBE(sat) IC=-1 A, IB=-50mA
VBE VCE= -2V, IC= -50 mA
VCE= -2V, IC= -100 mA
hFE
VCE= -2V, IC= -1 A
Cob VCB = –10V, IE = 0, f = 1MHz
fT
VCE= -2V, IC= -100mA
Min Typ Max Unit
-80
-60
V
-6
-0.1
uA
-0.1
-0.2 -0.3
-0.9 -1.2 V
-0.6
-0.7
135 340 400
100 200
25
pF
80 120
MHz
Note.1: Pulse: PW ≤ 350us,Duty Cycle ≤ 2℅
■ Classification of hfe(1)
Type
2SB1115A-Q 2SB1115A-P
Range
135-270
200-400
Marking
YQ
YP
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