2SB1115A Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Silicon Epitaxial Transistor

SMD Type
Transistors
PNP Silicon Epitaxial Transistor
2SB1115A
Features
World standard miniature package.
Low VCE(sat): VCE(sat)=-0.2V at 1A
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current (pulse) *
Total power dissipation
Junction temperature
Storage temperature range
* Pulsed: PW 10 ms, duty cycle
50%
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW 350 ìs, duty cycle 2%
hFE Classification
Marking
hFE
YQ
135 270
YP
200 400
Symbol
Rating
Unit
VCBO
-80
V
VCEO
-60
V
VEBO
-6
V
IC
-1
A
IC
-2
A
PT
2
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
ICBO VCB = -80 V, IE = 0
IEBO VEB = -6.0 V, IC = 0
VCE = -2.0 V, IC = -100 mA
hFE
VCE = -2.0 V, IC = -1.0A
VCE(sat) IC = -1.0A, IB = -50 mA
VBE(sat) IC = -1.0A, IB = -50 mA
VBE VCE = -2.0 V, IC = -50 mA
fT VCE = -2.0 V, IE = -100 mA
Cob VCB = -10 V, IE = 0 , f = 1.0 MHz
Min Typ Max Unit
-100 nA
-100 nA
135 340 400
100 200
-0.2 -0.3 V
-0.9 -1.2 V
-600
-700 V
80 120
MHz
25
pF
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