2SB1114-HF_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1114-HF
Transistors
■ Features
● High Dc current gain hFE=135 to 600
● Low VCE(sat) VCE(sat)=-0.3V at 1.5A
● Complementary to 2SD1614-HF
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-20
VCEO
-20
V
VEBO
-6
IC
-2
A
ICP
-3
PC
2
W
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -16V , IE=0
IEBO VEB= -6V , IC=0
VCE(sat) IC=-1.5 A, IB=-50mA
VBE(sat) IC=-1.5 A, IB=-50mA
VBE VCE= -6V, IC= -100 mA
VCE= -2V, IC= -100 mA
hFE
VCE= -2V, IC= -2 A
Cob VCB = –10V, IE = 0, f = 1MHz
fT
VCE= -10V, IE= 50mA
■ Classification of hfe(1)
Type
2SB1114-M-HF 2SB1114-L-HF 2SB1114-K-HF
Range
135-270
200-400
300-600
Marking
ZM F
ZL F
ZK F
Min Typ Max
-20
-20
-6
-0.1
-0.1
-0.3 -0.5
-1.05 -1.2
-0.65 -0.68 -0.75
135 350 600
40
60
180
Unit
V
uA
V
pF
MHz
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