2SB1073_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1073
Transistors
■ Features
● Low collector to emitter saturation voltage VCE(sat).
●Large peak collector current ICP.
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-30
VCEO
-20
V
VEBO
-7
IC
-4
A
ICP
-7
PC
1
W
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -30V , IE=0
IEBO VEB= -7V , IC=0
VCE(sat) IC=-3 A, IB=-100mA
VBE(sat) IC=-3 A, IB=-100mA
hFE VCE= -2V, IC= -2 A
Cob VCB = –20V, IE = 0, f = 1MHz
fT
VCE= -6V, IE= 50mA,f=200MHz
Min Typ Max Unit
-30
-20
V
-7
-0.1
uA
-0.1
-0.6 -1
V
-1.2
120
315
40
pF
120
MHz
■ Classification of hfe
Type
Range
Marking
2SB1073-Q
120-205
IQ
2SB1073-R
180-315
IR
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