2SB1073 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency amplification)

SMD Type
Transistors
Silicon PNP Epitaxial Planar Type
2SB1073
Features
Low collector-emitter saturation voltage VCE(sat)
Large peak collector current ICP
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Emitter-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Rating
Unit
VCBO
-30
V
VCEO
-20
V
VEBO
-7
V
ICP
-4
A
IC
-7
mA
PC
1
mW
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
VCBO IC = -10 ìA, IE = 0
VCEO IC = -1 mA, IB = 0
VEBO IE = -10 ìA, IC = 0
ICBO VCB = -30 V, IE = 0
IEBO VEB = -7 V, IC = 0
hFE VCE = -2 V, IC = -2 A
VCE(sat) IC = -3 A, IB = - 0.1 A
fT VCB = -6 V, IE = 50 mA, f = 200 MHz
Cob VCB = -20 V, IE = 0, f = 1 MHz
Min Typ Max Unit
-30
V
-20
V
-7
V
-0.1 ìA
-0.1 ìA
120
315
-0.6 -1.0 V
120
MHz
4
pF
hFE Classification
Marking
hFE
IP
120 205
IQ
180 315
www.kexin.com.cn ¹