2SB1070_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1070
Transistors
■ Features
● Low collector-emitter saturation voltage VCE(sat).
● High-speed switching.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
Rating
Unit
-40
-20
V
-5
-4
A
-8
1.3
W
150
℃
-55 to 150
1 Base
2 Collector
3 Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-on time
Storage time
Fall time
Transition frequency
Symbol
Test Conditions
Min Typ Max Unit
VCBO Ic= -100 μA， IE=0
-40
VCEO Ic= -10 mA，IB=0
-20
V
VEBO IE= -100μA， IC=0
-5
ICBO
IEBO
VCB= -40V , IE=0
VEB= -5V , IC=0
-50
uA
-50
VCE(sat) IC=-2 A, IB=-100mA
VBE(sat) IC=-2 A, IB=-100mA
-0.5
V
-1.5
VCE= -2V, IC= -1 A
hFE
VCE= -2V, IC= -100 mA
90
260
45
ton
tstg
IC = -2 A,IB1 = -0.2 A,IB2 = 0.2 A,
VCC = -20 V
tf
0.3
0.4
us
0.1
fT VCE = −5 V, IC = − 0.5 A, f = 10 MHz
150
MHz
■ Classification of hfe(1)
Type
2SB1070 -Q
Range
90-180
2SB1070-P
130-260
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