2SB1070A_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1070A
Transistors
■ Features
● Low collector-emitter saturation voltage VCE(sat).
● High-speed switching.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
1 Base
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-50
VCEO
-40
V
VEBO
-5
IC
-4
A
ICP
-8
PC
1.3
W
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector- base breakdown voltage
VCBO Ic= -100 μA， IE=0
-50
Collector- emitter breakdown voltage
VCEO Ic= -10 mA，IB=0
-40
V
Emitter - base breakdown voltage
VEBO IE= -100μA， IC=0
-5
Collector-base cut-off current
Emitter cut-off current
ICBO
IEBO
VCB= -50V , IE=0
VEB= -5V , IC=0
-50
uA
-50
Collector-emitter saturation voltage
Base - emitter saturation voltage
VCE(sat) IC=-2 A, IB=-100mA
VBE(sat) IC=-2 A, IB=-100mA
-0.5
V
-1.5
DC current gain
VCE= -2V, IC= -1 A
hFE
VCE= -2V, IC= -100 mA
90
260
45
Turn-on time
Storage time
Fall time
ton
tstg
IC = -2 A,IB1 = -0.2 A,IB2 = 0.2 A,
VCC = -20 V
tf
0.3
0.4
us
0.1
Transition frequency
fT VCE = −5 V, IC = − 0.5 A, f = 10 MHz
150
MHz
■ Classification of hfe(1)
Type
Range
2SB1070A-Q
90-180
2SB1070A-P
130-260
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