2SB1027_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1027
Transistors
■ Features
● Low frequency power amplifier
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
(Note.1)
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
-180
-120
-5
-1.5
-3
1
150
-55 to 150
Note.1: PW ≤ 10ms,Duty cycle≤ 20℅
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Symbol
Test Conditions
VCBO Ic= -1m A， IE=0
VCEO Ic= -10 mA，RBE=∞
VEBO IE= -1mA， IC=0
ICBO VCB= -160V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-500m A, IB=-50mA
VBE(sat) IC=-500m A, IB=-50mA
VBE VCE= -5V, IC= -150 mA
VCE= -5V, IC= -150 mA
hFE
VCE= -5V, IC= -500 mA
■ Classification of hfe(1)
Type
Range
Marking
2SB1027-H
60-120
EH
2SB1027-J
100-200
EJ
2SB1027-K
160-320
EK
1.Base
2.Collector
3.Emitter
Unit
V
A
W
℃
Min Typ Max Unit
-180
-120
V
-5
-10
uA
-0.1
-1
-1.2 V
-0.9
60
320
30
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