2SB1026 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

SMD Type
Silicon PNP Epitaxial
2SB1026
Transistors
Features
Low frequency power amplifier
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
iC(peak)*1
PC*2
Tj
Tstg
*1 PW 10 ms, Duty cycle 20%
*2 Value on the alumina ceramic board (12.5X 20X 0.7 mm)
Rating
-120
-100
-5
-1
-2
1
150
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE
fT
Cob
Testconditons
IC = -10 ìA, IE = 0
IC = -1 mA, RBE =
IE = -10 ìA, IC = 0
VCB = -100 V, IE = 0
VCE = -5 V, IC = -150mA,
VCE = -5 V, IC = -500mA
IC = -0.5 A, IB = -50 mA,
VCE = -5 V, IC = -150mA,
VCE = -5 V, IC = -150 mA
VCB = -10 V, IE = 0,f = 1 MHz
Unit
V
V
V
A
A
W
Min Typ Max Unit
-120
V
-100
V
-5
V
-10 ìA
60
200
30
-1.0 V
-0.9 V
140
MHz
20
pF
hFE Classification
Marking
hFE
DL
60 to 120
DM
100 to 200
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