2SB1025_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1025
Transistors
■ Features
● Low frequency power amplifier
● Complementary to 2SD1418
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
(Note.1)
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Note.1: PW ≤ 10ms,Duty cycle≤ 20℅
■ Electrical Characteristics Ta = 25℃
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
-120
-80
-5
-1
-2
1
150
-55 to 150
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA，RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -100V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-500mA, IB=-50mA
VBE(sat) IC=-500 mA, IB=-50mA
VBE VCE= -5V, IC= -150 mA
VCE= -5V, IC= -150 mA
hFE
VCE= -5V, IC= -500 mA
Cob VCB = –10V, IE = 0, f = 1MHz
fT
VCE= -5V, IC= -150mA
■ Classification of hfe(1)
Type
Range
Marking
2SB1025-H
60-120
DH
2SB1025-J
100-200
DJ
2SB1025-K
160-320
DK
1.Base
2.Collector
3.Emitter
Unit
V
A
W
℃
Min Typ Max Unit
-120
-80
V
-5
-10
uA
-0.1
-1
-1.2 V
-0.9
60
320
30
20
pF
140
MHz
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