2SB1001_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB1001
Transistors
■ Features
● Low frequency power amplifier
● Complementary to 2SD1367
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
(Note.1)
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Note.1: PW ≤ 10ms,Duty cycle≤ 20℅
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
-20
-16
-6
-2
-3
1
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= -100 μA， IE=0
Collector- emitter breakdown voltage
VCEO Ic= -1 mA，RBE=∞
Emitter - base breakdown voltage
VEBO IE= -100μA， IC=0
Collector-base cut-off current
ICBO VCB= -16V , IE=0
Emitter cut-off current
IEBO VEB= -5V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=-1 A, IB=-100mA
Base - emitter saturation voltage
VBE(sat) IC=-1 A, IB=-100mA
DC current gain
hFE VCE= -2V, IC= -100 mA
Collector output capacitance
Cob VCB = –10V, IE = 0, f = 1MHz
Transition frequency
fT
VCE= -2V, IC= -10mA
■ Classification of hfe
Type
2SB1001-H
Range
100-200
Marking
BH
2SB1001-J
160-320
BJ
1.Base
2.Collector
3.Emitter
Unit
V
A
W
℃
Min Typ Max Unit
-20
-16
V
-6
-0.1
uA
-0.1
-0.15 -0.3
V
-1 -1.2
100
320
50
pF
150
MHz
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